| 摘要 |
PROBLEM TO BE SOLVED: To provide copper target material for sputtering which allows forming a low resistant pure Cu film as an electrode wiring on a ground layer which is provided on an insulation substrate by sputtering, and a manufacturing method of the copper target material for sputtering.SOLUTION: A sputtering target is formed by oxygen-free copper cast material with a purity of 99.9% or more. An average crystal grain size of a sputtering surface is 0.07 mm or more and 0.20 mm or less. A crystal plane orientation of the sputtering surface is measured with an EBSD method. A crystal planes having a tilt angle of ±15° or less from a (111) plane, a (200) plane, a (220) plane, or a (311) plane is included in the (111) plane, the (200) plane, the (220) plane, or the (311) plane, respectively. When a measurement area with the EBSD method is defined as 100%, an area ratio of the plane other than the (111) plane, the (200) plane, the (220) plane, or the (311) plane is 15% or less. |
