发明名称 半導体装置及びその製造方法
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same which can prevent reduction of a short circuit and voltage-withstanding between wiring due to a metal residue caused by reformation of the wiring.SOLUTION: A semiconductor device is provided with a recess part pattern for polishing acceleration in which a barrier film is formed on a surface in a region having coarse embedded wiring.
申请公布号 JP6094320(B2) 申请公布日期 2017.03.15
申请号 JP20130070126 申请日期 2013.03.28
申请人 富士通株式会社 发明人 須田 章一
分类号 H01L21/3205;H01L21/768;H01L23/12;H01L23/522 主分类号 H01L21/3205
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