| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for materialization of a wide band gap semiconductor device which has a reduced channel resistance and is improved in the instability of a threshold voltage.SOLUTION: The method comprises: introducing an n-type impurity into a p-type well region 5 of a SiC power MOSFET to form a channel neutral layer 7 for a channel. The average value of the concentration of the n-type impurity in a region ranging from the interface of a gate insulative film 8 and the channel neutral layer 7 up to 200 nm in a direction of the depth is twice or smaller than the average value of the concentration of a p-type impurity in the same region. |
