| 摘要 |
PROBLEM TO BE SOLVED: To inhibit formation of a level difference in a plated layer formed on wiring of a semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate having a first surface; an electronic circuit which is located on the semiconductor substrate and has an electrode on the first surface; an insulation layer which is located on the first surface and has an opening on the electrode; a wiring layer which is located across from a first region on the insulation layer and to inside the opening and electrically connected to the electrode; a conductive layer located in a second region on the insulation layer along at least a part of an outer periphery of the wiring layer; and a first plated layer located on the wiring layer and a second plated layer located on the conductive layer. |
