| 摘要 |
The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (-110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction. |
