| 发明名称 |
RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD |
| 摘要 |
The resist material according to the present invention contains a compound represented by the following formula (1):
wherein each R 0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4. |
| 申请公布号 |
EP3141957(A1) |
申请公布日期 |
2017.03.15 |
| 申请号 |
EP20150789185 |
申请日期 |
2015.05.08 |
| 申请人 |
Mitsubishi Gas Chemical Company, Inc. |
发明人 |
TOIDA, Takumi;SATO, Takashi;ECHIGO, Masatoshi |
| 分类号 |
G03F7/004;G03F7/038;G03F7/039;H01L21/027 |
主分类号 |
G03F7/004 |
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