| 发明名称 |
TRENCH SHIELD CONNECTED JFET |
| 摘要 |
A shielded junction field effect transistor (JFET) is described having gate trenches and shield trenches, the shield trenches being deeper and narrower than the gate trenches. The gate trenches may be fully aligned, partially aligned, or separated from the shield trenches. |
| 申请公布号 |
EP3005419(A4) |
申请公布日期 |
2017.03.15 |
| 申请号 |
EP20140808250 |
申请日期 |
2014.06.06 |
| 申请人 |
United Silicon Carbide Inc. |
发明人 |
BHALLA, Anup;ALEXANDROV, Peter |
| 分类号 |
H01L29/808;H01L21/337;H01L29/06;H01L29/10 |
主分类号 |
H01L29/808 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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