发明名称 |
GaN ON Si(100)SUBSTRATE USING EPI-TWIST |
摘要 |
A method of growing GaN material on a silicon substrate includes providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10° offset surface orientation and using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate. The single crystal stress managing layer includes rare earth oxide with a (110) crystal orientation and a cubic crystal structure. The method further includes epitaxially growing a single crystal buffer layer on the stress managing layer. The single crystal buffer layer includes rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer. Epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material having one of a (11-20) crystal orientation and a (0001) crystal orientation. |
申请公布号 |
EP3053184(A4) |
申请公布日期 |
2017.03.15 |
申请号 |
EP20140860165 |
申请日期 |
2014.10.28 |
申请人 |
Translucent, Inc. |
发明人 |
DARGIS, Rytis;CLARK, Andrew;ARKUN, Erdem;ROUCKA, Radek |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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