| 摘要 |
A film thickness measuring device including: a terahertz wave generator (19); a prism (21) that has an entrance surface (69), an abutment surface (70) capable of abutting a surface of a sample (3) including a first film (31a) on a side where the first film (31a) is formed, and an emission surface (71); a terahertz wave detector (23) that detects an S-polaiization component and a P-polarization component of a reflected wave from the sample (3), emitted from the emission surface (71) of the prism (21); and a control section (6) configured to determine a thickness of the first film (31a) formed in the sample (3), based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave. |
