| 摘要 |
A solid state imaging device includes: multiple unit pixels including a photoelectric converter (PD) generating electrical charge in accordance with incident light quantity and accumulating the charge, a first transfer gate (TRX) transferring the accumulated charge, a charge holding region (MEM) holding the transferred charge, a second transfer gate (TRG) transferring the held charge, and a floating diffusion (FD) region converting the transferred charge into voltage; an intermediate charge transfer unit (TRX) transferring, to the charge holding region (MEM), a charge exceeding a predetermined charge amount as a first signal charge; and a pixel driving unit setting the first transfer gate (TRX) to a non-conducting state, set the second transfer gate (TRG) to a conducting state, transfer the first signal charge to the floating diffusion region (FD), set the second transfer gate (TRG) to a non-conducting state, set the first transfer gate (TRX) to a conducting state, and transfer the accumulated charge to the charge holding region (MEM) as a second signal charge. |
