发明名称 原子拡散接合方法及び前記方法で封止されたパッケージ型電子部品の製造方法
摘要 PROBLEM TO BE SOLVED: To provide a joining method which can be used for joining between wide materials including joining between dissimilar materials, and also can perform joining under the atmospheric pressure without giving a physical damage to substrates as joining objects.SOLUTION: Thin films with fine crystal structure made of a single metal or an alloy are formed on the respective smooth faces of two substrates with the smooth faces in a vacuum vessel. Thereafter, the two substrates are superimposed in such a manner that the thin films formed on the two substrates are contacted in a high purity inert gas atmosphere under the atmospheric pressure, thus atomic diffusion is generated on the joining interfaces and crystal grain boundaries of the fine crystal thin films to join the two substrates.
申请公布号 JP6089162(B2) 申请公布日期 2017.03.08
申请号 JP20110093428 申请日期 2011.04.19
申请人 株式会社ムサシノエンジニアリング 发明人 島津 武仁;魚本 幸;宮本 和夫
分类号 B23K20/00;H01L21/02 主分类号 B23K20/00
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