发明名称 PHOTOMASK BLANK
摘要 A photomask blank comprising a transparent substrate (1) and a chromium-containing film (2) is provided. The chromium-containing film is formed of a chromium compound containing Cr, N, and optionally O, has a total Cr+N+O content ‰¥ 93 at%, and meets the formula: 3cry ‰¤ 20 + 3N. A chromium compound layer meeting a first composition having a N/Cr atomic ratio ‰¥ 0.95, a Cr content ‰¥ 40 at%, a Cr+N content ‰¥ 80 at%, and an O contents ‰¤ 10 at% accounts for 10-70% of the overall thickness of the chromium-containing film.
申请公布号 EP3139212(A2) 申请公布日期 2017.03.08
申请号 EP20160184794 申请日期 2016.08.18
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 SASAMOTO, Kouhei
分类号 G03F1/20;G03F1/26;G03F1/80 主分类号 G03F1/20
代理机构 代理人
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