| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin injection electrode structure achieving a high output, which inhibits spin scattering at a boundary surface caused by a shear of a lattice constant between a semiconductor channel layer and a tunnel layer, and a lattice constant between the tunnel layer and a ferromagnetic layer; or provide a spin conduction element.SOLUTION: A spin injection electrode structure comprises tunnel layers and a ferromagnetic layer which are arranged on a semiconductor channel layer, in which a lattice constant of a first tunnel layer in contact with the semiconductor channel layer and a lattice constant of a second tunnel layer in contact with the ferromagnetic layer are different from each other, and further, the first tunnel layer and the second tunnel layer have crystalline systems different from each other. |
