发明名称 |
HIGH POWER RF FIELD EFFECT TRANSISTOR SWITCHING USING DC BIASES |
摘要 |
Systems, methods, and apparatus are provided for tuning in wireless power transfer circuits. One aspect of the disclosure provides an apparatus for tuning. The apparatus includes a field effect transistor having a gate, source, and drain, where the field effect transistor is configured to electrically engage a tuning element to an AC power path. In some embodiments, one of the source or drain contacts is at an alternating current voltage. |
申请公布号 |
EP2912751(B1) |
申请公布日期 |
2017.03.08 |
申请号 |
EP20130798884 |
申请日期 |
2013.11.19 |
申请人 |
Qualcomm Incorporated |
发明人 |
WHEELAND, Cody B.;IRISH, Linda S.;VON NOVAK, William H.;MAYO, Gabriel Issac |
分类号 |
H02J5/00;H02J7/02;H03J3/20 |
主分类号 |
H02J5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|