发明名称 HIGH POWER RF FIELD EFFECT TRANSISTOR SWITCHING USING DC BIASES
摘要 Systems, methods, and apparatus are provided for tuning in wireless power transfer circuits. One aspect of the disclosure provides an apparatus for tuning. The apparatus includes a field effect transistor having a gate, source, and drain, where the field effect transistor is configured to electrically engage a tuning element to an AC power path. In some embodiments, one of the source or drain contacts is at an alternating current voltage.
申请公布号 EP2912751(B1) 申请公布日期 2017.03.08
申请号 EP20130798884 申请日期 2013.11.19
申请人 Qualcomm Incorporated 发明人 WHEELAND, Cody B.;IRISH, Linda S.;VON NOVAK, William H.;MAYO, Gabriel Issac
分类号 H02J5/00;H02J7/02;H03J3/20 主分类号 H02J5/00
代理机构 代理人
主权项
地址