| 摘要 |
PURPOSE:To prevent degradation in breakdown voltage and further breakdown due to the concentration of electric fields. CONSTITUTION:The title semiconductor integrated circuit is one wherein a semiconductor active element, containing a source region and a drain region, is isolated like an island using an insulator, and wherein the electrode wiring is led out of the source region across the insulator. The integrated circuit includes a field plate 30 that is placed under the electrode wiring, and that is supplied with a voltage equivalent to the potential of the drain region; and a channel stopper 31 that is placed under the field plate 30 between the source and drain regions, and that is depleted hen a high voltage is applied to the drain. |
