| 摘要 |
PROBLEM TO BE SOLVED: To provide a photomask blank having a resist, capable of reducing size distribution of a resist pattern generated at a development process in manufacturing a photomask, improving a pattern resolution, reducing failure occurrence, and responding to a requirement of miniaturization, and also to provide a manufacturing method thereof and a manufacturing method of a photomask.SOLUTION: A predetermined plasma treatment is applied on a surface of a resist film formed on a principal surface of a photomask blank, so that a contact angle of an aqueous solution system of the surface of the resist film to a developer can be improved to be within a predetermined range. A photomask is manufactured using the photomask blank having the resist film with the contact angle thereof within the predetermined range. |
