| 发明名称 |
Semiconductor device including a heterojunction diode and manufacturing method thereof |
| 摘要 |
Impurity concentration of a second semiconductor region (101) is set such that when a predetermined reverse bias is applied to a heterojunction diode configured by a first semiconductor region (100) and the second semiconductor region (101), a breakdown voltage at least in a heterojunction region other than outer peripheral ends of the heterojunction diode is a breakdown voltage of a semiconductor device. |
| 申请公布号 |
EP1845561(B1) |
申请公布日期 |
2017.03.08 |
| 申请号 |
EP20070007103 |
申请日期 |
2007.04.04 |
| 申请人 |
NISSAN MOTOR CO., LTD. |
发明人 |
Hayashi, Tetsuya;Hoshi, Masakatsu;Shimoida, Yoshio;Tanaka, Hideaki;Yamagami, Shigeharu |
| 分类号 |
H01L29/861;H01L21/28;H01L21/329;H01L29/267;H01L29/417;H01L29/47;H01L29/78;H01L29/80;H01L29/868;H01L29/872 |
主分类号 |
H01L29/861 |
| 代理机构 |
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