化学蒸着法によるＳｉ基板上へのニッケル薄膜、及び、Ｓｉ基板上へのＮｉシリサイド薄膜の製造方法

摘要

PROBLEM TO BE SOLVED: To provide a method for directly forming a Ni thin film on a Si substrate without remaining impurities in the formed Ni thin film, and a method for manufacturing a NiSi film obtained by properly siliciding the Ni thin film.SOLUTION: The method for manufacturing a nickel thin film uses: a Si substrate having any of B, P or As doped on the surface as a substrate; a nickel complex having a cyclopentadienyl group (Cp) or its derivative and chain or cyclic alkenyl group consisting of 3-9 carbon atoms or its derivative coordinated in nickel being a hydrocarbon nickel complex without including any elements except carbon and hydrogen in the structure as a raw material compound: hydrogen as reactive gas; and a deposition pressure of 1-150 torr and a deposition temperature of 80-250°C as deposition conditions.