| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of an aluminum-based group III nitride single crystal capable of stabilizing a growth rate of the aluminum-based group III nitride single crystal.SOLUTION: A method for producing an aluminum-based group III nitride single crystal repeatedly in a batch process by reacting aluminum halide gas with nitrogen source gas includes a step for generating aluminum halide gas by bringing aluminum into contact with halogen-based gas after bringing aluminum into contact with reactive gas such as oxygen, when producing the aluminum halide gas. |
