发明名称 絶縁ゲート型半導体素子の駆動装置
摘要 A drive circuit includes a constant current circuit which supplies a constant current to the gate of an IGBT and on-operates the IGBT; a discharge circuit which grounds the gate of the IGBT and off-operates the IGBT; and a switch circuit which operates one of the constant current circuit or discharge circuit in accordance with a control signal and turns on or off the IGBT. In particular, the drive circuit includes a current detection circuit which detects a current flowing through the IGBT when the IGBT is turned on; and a current regulation circuit which feeds the current detected by the current detection circuit back to the constant current circuit and controls an output current of the constant current circuit in accordance with the turn-on characteristics of the IGBT.
申请公布号 JP6089599(B2) 申请公布日期 2017.03.08
申请号 JP20120242242 申请日期 2012.11.01
申请人 富士電機株式会社 发明人 森 貴浩
分类号 H02M1/08;H02M1/00 主分类号 H02M1/08
代理机构 代理人
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