| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor crystal of a group 13 metal in the periodic table usable as a ground substrate capable of producing a device having a desired characteristic at excellent yield.SOLUTION: A nitride semiconductor crystal of a group 13 metal in the periodic table in which a principal surface is a non-polar surface or a semi-polar surface, and the maximum width of basal surface lamination defects on the principal surface is 800 μm or less, and the principal surface includes basal surface lamination defects having respective widths which are different as much as five times or more, can be used as a ground substrate capable of producing a device having a desired characteristic at excellent yield. |
