| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition excellent in various lithographic characteristics such as LWR (line width roughness) and sensitivity, a method for forming a resist pattern, a polymeric compound, a method for producing a polymeric compound, and a compound.SOLUTION: The resist composition generates an acid by exposure and shows changes in the solubility with a developing solution by an action of an acid, and includes a base component (A) showing changes in the solubility with a developing solution by an action of an acid. The base component (A) comprises a polymeric compound (A1) having a structural unit (a0) expressed by the general formula (a0-1). |
