| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a ground substrate that may improve a productivity of a group III nitride semiconductor substrate and a method for producing the group III nitride semiconductor substrate using the method for producing the ground substrate.SOLUTION: A method for producing a ground substrate comprises a step for forming a carbide layer 12 consisting of one selected from aluminum carbide, titanium carbide, zirconium carbide, hafnium carbide, vanadium carbide and tantalum carbide on a substrate layer 11; a step for nitriding the carbide layer 12; a step for epitaxially growing a group III nitride semiconductor layer 15 on the nitrided carbide layer 12; and a step for heat treating the laminate body consisting of the substrate layer 11, nitrided carbide layer 12 and the group III nitride semiconductor layer 15 while immersed in a liquid of the group III element and peeling the substrate layer 11 from the group III nitride semiconductor layer 15 to obtain a ground substrate of the group III nitride semiconductor containing the group III nitride semiconductor layer 15. |
