Damage free enhancement of dopant diffusion into a substrate

摘要

A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.

主权项

1. A method of doping a substrate, comprising:
implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater; depositing a doping layer containing a dopant on the surface of the substrate; andannealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature, wherein operations including the depositing, the implanting, and the annealing take place in a cluster tool without breaking vacuum between operations, the method further comprising:
removing an oxide layer before the implanting and before the depositing; anddepositing a capping layer on the substrate after the implanting and after the depositing and before the annealing, wherein the removing and the depositing are further performed in the cluster tool without breaking vacuum between operations.