Method for interconnect scheme

摘要

A method of fabricating a semiconductor device is disclosed. The method includes forming a first dielectric layer over a substrate, forming a first trench in the first dielectric layer, forming a metal line in the first trench, removing a first portion of the metal line to form a second trench and removing a second portion of the metal line to form a third trench. A third portion of the metal line is disposed between the second and third trenches. The method also includes forming a second dielectric layer in the second and third trenches.

主权项

1. A method comprising:
forming a first dielectric layer over a substrate; forming a first trench in the first dielectric layer; forming a metal line in the first trench; forming a hard mask layer over the metal line, the hard mask including first and second openings that expose a first portion and a second portion of the metal line, respectively, wherein a first portion of the first dielectric layer is exposed within the first opening; removing the first portion of the metal line to form a second trench and removing the second portion of the metal line to form a third trench, wherein a third portion of the metal line is disposed between the second and third trenches; and forming a second dielectric layer in the second and third trenches.