Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structure

摘要

The present disclosure provides, in a first aspect, a semiconductor device structure, including an SOI substrate comprising a semiconductor base substrate, a buried insulating structure formed on the semiconductor base substrate and a semiconductor film formed on the buried insulating structure, wherein the buried insulating structure comprises a multilayer stack having a nitride layer interposed between two oxide layers. The semiconductor device structure further includes a semiconductor device formed in and above an active region of the SOI substrate, and a back bias contact which is electrically connected to the semiconductor base substrate below the semiconductor device.

主权项

1. A semiconductor device structure, comprising:
an SOI substrate comprising a semiconductor base substrate material, a buried insulating structure formed on said base substrate material, and a semiconductor film formed on said buried insulating structure, wherein said buried insulating structure comprises a multilayer stack having a nitride layer interposed between two oxide layers; a semiconductor device formed in and above an active region of said SOI substrate, comprising:
a gate structure;raised source/drain regions located at opposing sides of said gate structure; anda silicide contact region defined in said base substrate material below said semiconductor device; a nitride material layer disposed above said semiconductor device and at least a portion of said silicide contact region, a contact dielectric disposed above said nitride material layer, and a back bias contact at least partially disposed in said contact dielectric and being electrically connected to said silicide contact region.