Single varactor stack with low second-harmonic generation

摘要

Embodiments include semiconductor devices related to compound varactor circuits. Specifically, a semiconductor device may be constructed of a modified anti-series string of varactor pairs, wherein one varactor in a varactor pair has an effective area larger than the other varactor. Varactor pairs in the anti-series string are arranged such that adjacent varactors coupling varactor pairs have equal effective areas. In some embodiments, the anti-series string may have four varactors (two varactor pairs.) In other embodiments, the anti-series string may have eight varactors (four varactor pairs) or twelve varactors (six varactor pairs). The compound varactor using the modified anti-series string of varactor pairs may be advantageous in reducing second harmonics related to parasitic capacitances in anti-series varactor applications.

主权项

1. A semiconductor device comprising:
a first port; a second port; and an anti-series string of varactors electrically coupled between the first port and the second port, the anti-series string of varactors comprising:
a first varactor;a second varactor having an anode electrically coupled to an anode of the first varactor;a third varactor having a cathode electrically coupled to a cathode of the second varactor; anda fourth varactor having an anode electrically coupled to an anode of the third varactor wherein the first varactor and fourth varactor each has a first area and the second varactor and third varactor each has a second area, which is different than the first area.