发明名称 System and method for higher quality log likelihood ratios in LDPC decoding
摘要 A nonvolatile memory storage controller is provided for delivering log likelihood ratios (LLRs) to a low-density parity check (LDPC) decoder for use in the decoding of an LDPC encoded codeword. The controller includes read circuitry for reading an LDPC encoded codeword stored in a nonvolatile memory storage module using a plurality of soft-decision reference voltages to provide a plurality of soft-decision bits representative of the codeword. The controller further includes a plurality of neighboring cell contribution LLR look-up tables representative of the contribution of the neighboring cells to threshold voltage distribution of the memory storage module. The controller provides the LLRs from the appropriate LLR look-up table to an LDPC decoder for the subsequent decoding of the codeword.
申请公布号 US9590656(B2) 申请公布日期 2017.03.07
申请号 US201414210067 申请日期 2014.03.13
申请人 Microsemi Storage Solutions (US), Inc. 发明人 Micheloni Rino;Marelli Alessia;Onufryk Peter Z.;Norrie Christopher I. W.;Jaser Ihab;Crippa Luca
分类号 H03M13/00;H03M13/11;H03M13/39;H03M13/25;H04L1/00;H03M13/15;G06F11/10;H03M13/37 主分类号 H03M13/00
代理机构 Glass & Associates 代理人 Glass & Associates ;Glass Kenneth;Sauter Molly
主权项 1. A method of providing one or more log likelihood ratio (LLRs) of a target cell to a low-density parity check (LDPC) decoder, the method comprising: storing a neighboring cell contribution LLR look-up table associated with the nonvolatile memory storage module, the neighboring cell contribution LLR look-up table including combinations of possible read patterns for the target cell and the neighboring cells, and associated LLR's, each of the LLR's corresponding to a bit error rate for the associated possible read pattern; reading a threshold voltage of a target cell stored in a nonvolatile memory storage module; reading a threshold voltage of one or more neighboring cells of the target cell stored in the nonvolatile memory storage module; accessing the neighboring cell contribution LLR look-up table associated with the nonvolatile memory storage module; extracting from the neighboring cell contribution LLR look-up table the LLR corresponding to the pattern of the read of the threshold voltage of the target cell and the read of the threshold voltage of the one or more neighboring cells; and providing the extracted LLR to an LDPC decoder.
地址 Aliso Viejo CA US