Semiconductor device with field electrode structures in a cell area and termination structures in an edge area

摘要

A semiconductor device includes field electrode structures regularly arranged in lines in a cell area and forming a first portion of a regular pattern. Termination structures are formed in an inner edge area surrounding the cell area, wherein at least portions of the termination structures form a second portion of the regular pattern. Cell mesas separate neighboring ones of the field electrode structures from each other in the cell area and include first portions of a drift zone, wherein a voltage applied to a gate electrode controls a current flow through the cell mesas. At least one doped region forms a homojunction with the drift zone in the inner edge area.

主权项

1. A semiconductor device comprising:
field electrode structures arranged in a cell area and between gate structures, wherein the field electrode structures extend into a semiconductor body and form a first portion of a pattern; termination structures formed in an inner edge area surrounding the cell area, wherein at least portions of the termination structures form a second portion of the pattern; cell mesas separating neighboring ones of the field electrode structures from each other in the cell area; and at least one doped region forming a homojunction with a drift zone in the inner edge area, wherein each of the field electrode structures comprises a field electrode and a field dielectric separating the field electrode from the semiconductor body, wherein each of the termination structures comprises a termination electrode and a termination dielectric separating the termination electrode from the semiconductor body.