Pre-compensation of memory threshold voltage

摘要

Methods of operating a memory include storing a first target data state of multiple possible data states of a first memory cell to be programmed in a target data latch coupled to a data node, storing at least one bit of a second target data state of the multiple possible data states of a second memory cell to be programmed in an aggressor data latch coupled to the data node, and programming the first memory cell and performing a program verify operation for the first target data state to determine if the first memory cell is verified for the first target data state. The program verify operation including: an intermediate verify corresponding to an amount of aggression to apply a voltage to the data node when performing the intermediate verify, based on the at least one bit of the second target state stored in the aggressor data latch; and a program verify corresponding to a condition of no aggression to apply to the voltage to the data node when performing the program verify, based on the at least one bit of the second target state stored in the aggressor data latch. The methods including inhibiting the first memory cell from further programming if the first memory cell is verified during the intermediate verify and the at least one bit in the aggressor data latch corresponds to the particular amount of aggression, or the first memory cell is verified during the program verify and the at least one bit in the aggressor data latch corresponds to the condition of no aggression. The second memory cell is a neighbor of the first memory cell.

主权项

1. A method of operating a memory, comprising:
storing a first target data state of multiple possible data states of a first memory cell to be programmed in a target data latch coupled to a data node; storing at least one bit of a second target data state of the multiple possible data states of a second memory cell to be programmed in an aggressor data latch coupled to the data node, wherein the second memory cell is a neighbor of the first memory cell; programming the first memory cell and performing a program verify operation for the first target data state to determine if the first memory cell is verified for the first target data state, the program verify operation comprising:
an intermediate verify corresponding to an amount of aggression to apply a voltage to the data node when performing the intermediate verify, based on the at least one bit of the second target state stored in the aggressor data latch; anda program verify corresponding to a condition of no aggression to apply to the voltage to the data node when performing the program verify, based on the at least one bit of the second target state stored in the aggressor data latch; and inhibiting the first memory cell from further programming if the first memory cell is verified during the intermediate verify and the at least one bit in the aggressor data latch corresponds to the particular amount of aggression, or the first memory cell is verified during the program verify and the at least one bit in the aggressor data latch corresponds to the condition of no aggression.