Interconnect structure and method of forming the same

摘要

An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.

主权项

1. A method of forming an interconnect structure, the method comprising:
forming a contact layer over a substrate; forming a dielectric layer over the contact layer; forming an opening through the dielectric layer to an exposed portion of the contact layer; forming an alloy layer along sidewalls of the opening and the exposed portion of the contact layer, wherein the alloy layer comprises a main metal and an additive metal, and a ratio of the additive metal to the main metal is from about 0.01 atomic percent to about 25 atomic percent; forming a glue layer over the alloy layer; performing a thermal treatment to form a silicide layer, the alloy layer over and in contact with the silicide layer, the silicide layer adjacent the exposed portion of the contact layer, wherein the thermal treatment further forms a barrier layer interposed between the dielectric layer and the alloy layer, wherein the barrier layer comprises manganese oxide (MnOx) or manganese silicon oxide (MnSixOz); and forming a conductive plug over the glue layer in the opening.