Asymmetric pass field-effect transistor for non-volatile memory

摘要

A method of performing an operation on a non-volatile memory (NVM) cell of a memory device is disclosed. The pass transistor of the NVM cell is an asymmetric transistor including a source with a halo implant. The source of the pass transistor is coupled to a common source line (CSL) that is shared among NVM cells of a sector of NVM cells. The operation may be performed by applying a first signal to a word line (WLS) coupled to a gate of a memory transistor of the NVM cell and applying a second signal to a bit line (BL) coupled to a drain of the memory transistor of the NVM cell.

主权项

1. A method comprising:
performing an operation on a non-volatile memory (NVM) cell of a memory device, wherein a pass transistor of the NVM cell is an asymmetric transistor comprising a source with a halo implant, wherein the source of the pass transistor is coupled to a common source line (CSL) that is shared among NVM cells of a sector of NVM cells, and wherein the operation comprises:
applying a first signal to a word line (WLS) coupled to a gate of a memory transistor of the NVM cell; andapplying a second signal to a bit line (BL) coupled to a drain of the memory transistor of the NVM cell.