Light emitting diode having magnetic structure and method of fabricating the same

摘要

A light emitting diode including a magnetic structure and a method of fabricating the same are disclosed. The magnetic structure composed of passivation layers and a magnetic layer is disposed inside a luminous structure composed of an active layer and a semiconductor layer. In the light emitting diode, the magnetic structure including the magnetic layer is disposed on a side surface of the active layer to improve recombination rate of charge carriers for light emission by increasing influence of a magnetic field applied to the active layer. In addition, the light emitting diode according to the present invention allows change in position of the magnetic structure including the magnetic layer depending upon an etched shape of the luminous structure, thereby realizing various magnetic field distributions.

主权项

1. A light emitting diode, comprising:
a substrate; a luminous structure including
a first conductive type semiconductor layer on the substrate,an active layer on an upper surface of the first conductive type semiconductor layer,a second conductive type semiconductor layer on an upper surface of the active layer,an inner region penetrating the second conductive type semiconductor layer and the active layer, andan outer region penetrating the second conductive type semiconductor layer and the active layer,wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are stacked in sequence on the substrate; a first, reflective electrode on the second conductive type semiconductor layer and comprising an opening over the inner region of the luminous structure; a second electrode on the first conductive type semiconductor layer in the outer region; and a magnetic structure in the inner region and including
a passivation layer on a wall of the inner region of the luminous structure, anda magnetic layer on the passivation layer and filling the inner region, wherein
a first portion of the upper surface of the first conductive type semiconductor layer is exposed to the passivation layer in the inner region so that the passivation layer directly contacts the first portion of the upper surface of the first conductive type semiconductor layer in the inner region, anda second portion of the upper surface of the first conductive type semiconductor layer is exposed to the second electrode in the outer region so that the second electrode directly contacts the second portion of the upper surface of the first conductive type semiconductor layer in the outer region.