Decoupling capacitor and method of making same

摘要

A device comprises a semiconductor substrate having first and second implant regions and an electrode above and between the first and second implant regions of a first dopant type. A contact structure is in direct contact with the first and second implant regions and the electrode. A third implant region has a second dopant type different from the first dopant type. A bulk contact is provided on the third implant.

主权项

1. A device, comprising:
a semiconductor substrate having first and second implant regions and an electrode above and between the first and second implant regions of a first dopant type; a contact structure in direct contact with the first and second implant regions and the electrode; and a third implant region having a second dopant type different from the first dopant type, the third implant having a bulk contact thereon, wherein:
the contact structure includes at least one slot contact extending parallel to a channel length direction, andthe at least one slot contact is located outside of the first and second implant regions such that the at least one slot contact is positioned laterally from the first and second implant regions.