Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers

摘要

A semiconductor device includes a silicide contact region positioned at least partially in a semiconductor layer, an etch stop layer positioned above the semiconductor layer, and a dielectric layer positioned above the etch stop layer. A contact structure that includes a conductive contact material extends through at least a portion of the dielectric layer and through an entirety of the etch stop layer to the silicide contact region, and a silicide protection layer is positioned between sidewalls of the etch stop layer and sidewalls of the contact structure.

主权项

1. A semiconductor device, comprising:
a silicide contact region positioned at least partially in a semiconductor layer; an etch stop layer positioned above said semiconductor layer; a dielectric layer positioned above said etch stop layer; a contact structure comprising a conductive contact material, said contact structure extending through at least a portion of said dielectric layer and through an entirety of said etch stop layer to said silicide contact region; and a silicide protection layer positioned between sidewalls of said etch stop layer and sidewalls of said contact structure, wherein said silicide protection layer covers at least an entirety of said sidewalls of said etch stop layer.