发明名称 Semiconductor cooling method and method of heat dissipation
摘要 The invention provides a semiconductor cooling method that comprises: providing two wafers which require to be treated by a mixed bonding process, wherein each of the wafers being provided with several metallic device structure layers therein. A heat dissipation layer is set in at least one of the wafers and arranged in the free area above at least one of the metallic device structure layers, and the heat dissipation layer connects to the adjacent metallic device structure layer and the invention provides a method of heat dissipation that comprises providing at least two wafers to be bonded; and arranging some conducting wires on a surface of wafers. In addition, the method includes the steps of performing a bonding process to form a device with bonded wafers, wherein one end of the conducting wires locates in the region where the wafers generate heat, and another end extends to an external of wafers.
申请公布号 US9589937(B2) 申请公布日期 2017.03.07
申请号 US201514812702 申请日期 2015.07.29
申请人 WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 Mei Shaoning;Chen Jun;Zhu Jifeng;Cheng Weihua
分类号 H01L25/065;H01L23/00;H01L23/367;H01L23/373;H01L25/00 主分类号 H01L25/065
代理机构 Beusse, Wolter, Sanks & Maire PLLC 代理人 Wolter Robert L.;Beusse, Wolter, Sanks & Maire PLLC
主权项 1. A semiconductor cooling method in a mixed bonding process, comprising: providing two wafers which require to be treated by a mixed bonding process, each of the wafers being provided with several metallic device structure layers therein; a heat dissipation layer is arranged in at least one of the wafers, said heat dissipation layer is arranged in the free area above at least one of the metallic device structure layers, and the heat dissipation layer connects to the adjacent metallic device structure layer which is adjacent to and below the heat dissipation layer; wherein, material of each of said heat dissipation layers is a good conductor of heat; said heat dissipation layer, through a plurality of holes, connects to the adjacent metallic device structure layer which is adjacent to and below the heat dissipation layer; said plurality of holes uniformly distribute in a same plane; said heat dissipation layer is composed of a plurality of parallel distributed metal wires in a same plane; and an interval between every two adjacent wires is of the same distance.
地址 Hubei CN