Bundled memory and manufacture method for a bundled memory with an external input/output bus

摘要

A bundled memory includes a substrate, a first memory die, a second memory die, a scribe line, and an electrical connection. The first memory die has a first input/output bus, and the second memory die has a second input/output bus, where the first memory die and the second memory die are formed over the substrate. The scribe line is formed between the first memory die and the second memory die. The electrical connection is formed over the scribe line for electrically connecting to the first input/output bus and the second input/output bus, where the electrical connection is electrically connected to an external input/output bus, where a size of the external input/output bus of the bundled memory is larger than or equal to a size of the first input/output bus and a size of the second input/output bus.

主权项

1. A bundled memory, comprising:
a substrate; a first memory die having a first input/output bus, wherein the first memory die is formed over the substrate; a second memory die having a second input/output bus, wherein the second memory die is formed over the substrate; a scribe line formed between the first memory die and the second memory die; and an electrical connection formed over the scribe line for electrically connecting to the first input/output bus and the second input/output bus, wherein the electrical connection is electrically connected to an external input/output bus, and a memory depth of the bundled memory is larger than a memory depth of the first memory die and a memory depth of the second memory die.