Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath

摘要

Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

主权项

1. A method of immersing a wafer into a plating solution, the method comprising:
(a) contacting a leading edge of the wafer, while the wafer is tilted with respect to the horizontal, with the plating solution at a first translational speed, followed by; (b) slowing the wafer to a second translational speed while the wafer's plating surface is partially immersed in the plating solution, wherein the second translational speed is greater than zero; and then (c) speeding the wafer to a third translational speed before the wafer's plating surface is fully immersed in the plating solution.