发明名称 Voltage generation circuit which is capable of executing high-speed boost operation
摘要 According to one embodiment, a voltage generation circuit includes a first boost circuit, a voltage division circuit, a first detection circuit, a capacitor and a first switch. The first boost circuit outputs a first voltage. The voltage division circuit divides the first voltage. The first detection circuit is configured to detect a first monitor voltage supplied to the first input terminal, based on a reference voltage which is supplied to a second input terminal of the first detection circuit, and to control an operation of the first boost circuit. The capacitor is connected between an output terminal of the first boost circuit and the first input terminal of the first detection circuit. The first switch cuts off a connection between the capacitor and the first detection circuit, based on an output signal of the first detection circuit, until the first voltage is output from the first boost circuit.
申请公布号 US9589656(B2) 申请公布日期 2017.03.07
申请号 US201414257501 申请日期 2014.04.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Midorikawa Tatsuro;Masuda Masami
分类号 G05F1/10;G11C16/30;H02M3/07 主分类号 G05F1/10
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A non-volatile semiconductor memory comprising: a first charge pump circuit configured to output a first voltage; a first resistance, a first end of the first resistance being electrically connected to an output node of the first charge pump circuit; a second resistance, a first end of the second resistance being electrically connected to a second end of the first resistance, a second end of the second resistance being electrically connected to a VSS terminal; a first amplifier, a first input end of the first amplifier being electrically connected to the second end of the first resistance and the first end of the second resistance; a first capacitor, a first end of the first capacitor being electrically connected to the output node of the first charge pump circuit and the first end of the first resistance; a first transistor, a first end of the first transistor being electrically connected to a second end of the first capacitor, a second end of the first transistor being electrically connected to the first input end of the first amplifier; and a second transistor, a first end of the second transistor being electrically connected to the second end of the first capacitor and the first end of the first transistor, a second end of the second transistor being electrically connected to the VSS terminal.
地址 Tokyo JP