发明名称 Apparatus and method for indirect surface cleaning
摘要 A photomask includes at least one feature disposed thereon. The at least one feature has an associated design location, where a distance between a location of the at least one feature and the associated design location defines a positional error of the at least one feature. A method for improving a performance characteristic of the photomask includes directing electromagnetic radiation toward the photomask, the electromagnetic radiation having a wavelength that substantially coincides with a high absorption coefficient of the photomask; generating a thermal energy increase in the photomask through incidence of the electromagnetic radiation thereon; and decreasing the positional error as a result of the generating the thermal energy increase in the photomask.
申请公布号 US9588420(B2) 申请公布日期 2017.03.07
申请号 US201615048774 申请日期 2016.02.19
申请人 RAVE LLC 发明人 LeClaire Jeffrey E.;Roessler Kenneth G.;Brinkley David
分类号 G03F1/82;G03F1/72;B08B7/00 主分类号 G03F1/82
代理机构 Baker and Hostetler LLP 代理人 Baker and Hostetler LLP
主权项 1. A wafer fabrication process including a method for improving optical characteristics of a photomask, comprising: performing a first wafer print process using the photomask and a pellicle disposed across the photomask; directing electromagnetic radiation through the pellicle toward the photomask, the photomask having a partially-absorbing thin film disposed thereon, the electromagnetic radiation having a wavelength that substantially coincides with a high absorption coefficient of the photomask; generating a thermal energy increase in the photomask in response to the electromagnetic radiation incident thereon; and modifying a position of a first feature on the photomask relative to a second feature on the photomask.
地址 Delray Beach FL US