发明名称 |
Apparatus and method for indirect surface cleaning |
摘要 |
A photomask includes at least one feature disposed thereon. The at least one feature has an associated design location, where a distance between a location of the at least one feature and the associated design location defines a positional error of the at least one feature. A method for improving a performance characteristic of the photomask includes directing electromagnetic radiation toward the photomask, the electromagnetic radiation having a wavelength that substantially coincides with a high absorption coefficient of the photomask; generating a thermal energy increase in the photomask through incidence of the electromagnetic radiation thereon; and decreasing the positional error as a result of the generating the thermal energy increase in the photomask. |
申请公布号 |
US9588420(B2) |
申请公布日期 |
2017.03.07 |
申请号 |
US201615048774 |
申请日期 |
2016.02.19 |
申请人 |
RAVE LLC |
发明人 |
LeClaire Jeffrey E.;Roessler Kenneth G.;Brinkley David |
分类号 |
G03F1/82;G03F1/72;B08B7/00 |
主分类号 |
G03F1/82 |
代理机构 |
Baker and Hostetler LLP |
代理人 |
Baker and Hostetler LLP |
主权项 |
1. A wafer fabrication process including a method for improving optical characteristics of a photomask, comprising:
performing a first wafer print process using the photomask and a pellicle disposed across the photomask; directing electromagnetic radiation through the pellicle toward the photomask, the photomask having a partially-absorbing thin film disposed thereon, the electromagnetic radiation having a wavelength that substantially coincides with a high absorption coefficient of the photomask; generating a thermal energy increase in the photomask in response to the electromagnetic radiation incident thereon; and modifying a position of a first feature on the photomask relative to a second feature on the photomask. |
地址 |
Delray Beach FL US |