发明名称 Light-emitting device, electronic equipment, and process of producing light-emitting device
摘要 A light-emitting device includes a light-reflecting layer, a first electrode disposed on or above the light-reflecting layer, a semi-transparent reflective second electrode, a light-emitting function layer disposed between the first electrode and the second electrode, and an electron-injection layer disposed between the light-emitting function layer and the second electrode. The second electrode is made of an Ag alloy having an Ag content of from 50% by atoms to 98% by atoms.
申请公布号 US9590204(B2) 申请公布日期 2017.03.07
申请号 US201615085313 申请日期 2016.03.30
申请人 SEIKO EPSON CORPORATION 发明人 Kobayashi Hidekazu;Shiratori Koya;Yoshioka Atsushi
分类号 H01L51/52;H01L51/50;H01L27/32 主分类号 H01L51/52
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A light-emitting device comprising: a light-reflecting layer; a transparent first electrode disposed on or above the light-reflecting layer; a semi-transparent reflective second electrode; a light-emitting function layer disposed between the first electrode and the second electrode; an electron-injection layer disposed between the light-emitting function layer and the second electrode; a first layer disposed on the second electrode for absorbing stress to the second electrode; and a passivation layer made of an inorganic material disposed on the first layer, wherein the second electrode is made of an alloy in which any of Mg, Cu, Zn, Pd, Nd, and Al is mixed with Ag at an atomic number ratio in the range of 1:3 to 1:50.
地址 Tokyo JP