Efficient dual metal contact formation for a semiconductor device

摘要

A method of forming contacts to an n-type layer and a p-type layer of a semiconductor device includes depositing a dielectric layer on the n-type layer and the p-type layer. A pattern is formed in the dielectric layer, the pattern having a plurality of metal contact patterns for the semiconductor device. A first metal layer is deposited into the plurality of metal contact patterns, and a second metal layer is deposited directly on the first metal layer. External contacts for the semiconductor device are formed, where the external contacts include the second metal layer.

主权项

1. A method of forming contacts to an n-type layer and a p-type layer of a semiconductor device, comprising:
depositing a dielectric layer on the n-type layer and the p-type layer; forming a pattern in the dielectric layer, the pattern comprising a plurality of metal contact patterns for the semiconductor device; depositing a first metal layer into the plurality of metal contact patterns, wherein the first metal layer is directly on the n-type layer and the p-type layer; depositing a second metal layer directly on the first metal layer; and forming external contacts for the semiconductor device, the external contacts comprising the second metal layer.