Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer

摘要

A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.

主权项

1. A current aperture vertical electron transistor (CAVET), comprising:
a first III-Nitride layer comprising a current aperture region; a conductive p-type III-Nitride current blocking layer on sides of the current aperture region; a semiconductor layer over and contacting both the first III-Nitride layer and the III-Nitride current blocking layer, the semiconductor layer including a conductive channel therein and a source implant region made for a source contact into the semiconductor layer, and wherein the current blocking layer is separated from the source implant region by at least one other region; and the source contact electrically connected to the conductive channel and to the III-Nitride current blocking layer.