| 发明名称 | Alloyed 2N copper wires for bonding in microelectronics devices | ||
| 摘要 | An alloyed 2N copper wire for bonding in microelectronics contains 2N copper and one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %. | ||
| 申请公布号 | US9589694(B2) | 申请公布日期 | 2017.03.07 |
| 申请号 | US201213690701 | 申请日期 | 2012.11.30 |
| 申请人 | Heraeus Deutschland GmbH & Co. KG | 发明人 | Sarangapani Murali;Yeung Ping Ha;Milke Eugen |
| 分类号 | C22C9/00;H01B1/02;C22C9/06;H01R4/02;B23K35/30;C22C1/02;C22F1/08;H01L23/00;C22F1/00;B23K20/10 | 主分类号 | C22C9/00 |
| 代理机构 | Panitch Schwarze Belisario & Nadel LLP | 代理人 | Panitch Schwarze Belisario & Nadel LLP |
| 主权项 | 1. An alloyed 2N copper wire for bonding in microelectronics, wherein the wire has a diameter of 10 to 250 μm and consists of 2N copper and two corrosion resistance alloying materials selected from the group consisting of Ag, Ni, Pd, Au, Pt, and Cr, and wherein a concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %. | ||
| 地址 | Hanau DE | ||