| 主权项 |
1. A thin-film transistor, comprising a gate terminal, a source terminal, and a drain terminal, the source terminal and the drain terminal being arranged in a side-by-side manner above the gate terminal, the source terminal comprising a first edge, the drain terminal comprising a second edge, the first edge and the second edge facing each other, the first edge and the second edge forming therebetween a channel, wherein the first edge and the second edge are both in a nonlinear form, and wherein with a dimension of the channel extending in an extension direction of the first edge and the second edge being a width of the channel that is defined between the first edge and the second edge spaced from each other in a lengthwise direction of the channel that is substantially perpendicular to the widthwise direction, the channel is narrowed from a middle thereof toward two ends in the widthwise direction of the channel, wherein the channel extends linearly in the widthwise direction and the first edge and the second edge are respectively location on opposite sides of the channel and extending between two opposite ends of the channel and defining an opening between the first and second edges at each of the two ends of the channel where the two openings are opposite to and spaced from each other in the widthwise direction and the width of the channel in the openings is reduced with respect to the width of the channel in the middle thereof, the openings being adapted to expose the two ends of the channel to receive external optical energy for exposure such that the optical energy received at the two ends of the channel corresponds to the optical energy received at the middle of the channel. |
