Thin-film transistor array substrate, manufacturing method therefor and display device thereof

摘要

A thin-film transistor array substrate is disclosed. The array substrate includes a support substrate, a plurality of scan lines on the support substrate, and a plurality of data lines on the support substrate, where the plurality of scan lines are insulated and intersect with the plurality of data lines. The array substrate also includes a plurality of pixel units located near intersections of the scan lines and the data lines, a first metal layer on the support substrate, and an insulating layer on the first metal layer, where the insulating layer includes a plurality of via holes, each exposing a portion of the first metal layer. The array substrate also includes a semiconductor layer on the insulating layer and electrically connected to the first metal layer, and a second metal layer on the semiconductor layer and electrically connected to the semiconductor layer.

主权项

1. A thin-film transistor array substrate comprising:
a substrate; a plurality of scan lines on the substrate; a plurality of data lines on the substrate, wherein the plurality of scan lines are insulated and intersect with the plurality of data lines, and a plurality of pixel units are located near the intersections of the scan lines and the data lines; a gate electrode metal layer on the substrate; an insulating layer on the gate electrode metal layer, wherein the insulating layer comprises a via hole exposing a portion of the gate electrode metal layer; a semiconductor layer on the insulating layer wherein a portion of the semiconductor layer fills the via hole and contacts the gate electrode metal layer; and a source/drain electrode metal layer on the semiconductor layer, wherein the source/drain electrode metal layer fills the via hole partially by a patterning process using the semiconductor layer as an etch stop layer, wherein the gate electrode metal layer, the semiconductor layer and the source/drain electrode metal layer overlap at least partially.