Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure

摘要

Semiconductor devices are provided such as, ferroelectric transistors and floating gate transistors, that include an epitaxial perovskite/doped strontium titanate structure formed above a surface of a semiconductor substrate. The epitaxial perovskite/doped strontium titanate structure includes a stack of, in any order, a doped strontium titanate and a perovskite type oxide.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a source region and a drain region located within said semiconductor substrate and separated by a channel region; a ferroelectric gate stack located above said channel region and comprising, from bottom to top, an undoped strontium titanate portion, a ferroelectric perovskite material portion located directly on said undoped strontium titanate portion, and a doped strontium titanate portion located directly on said ferroelectric perovskite, wherein said doped strontium titanate portion contains a dopant other than Nb, Ta or V; and a gate electrode located directly on a surface of said doped strontium titanate portion of said ferroelectric gate stack.