| 发明名称 | Ultraviolet-erasable nonvolatile semiconductor device | ||
| 摘要 | An ultraviolet-erasable nonvolatile semiconductor device has a protective film comprised of a silicon nitride film on which is laminated a silicon oxynitride film. The silicon nitride film has a thickness of 1000 Å or more and 2000 Å or less and the silicon oxynitride film has a thickness of about 7000 Å or more. The silicon nitride film and the silicon oxynitride film cooperate to prevent moisture from penetrating into the ultraviolet-erasable nonvolatile semiconductor device. The thickness of the silicon nitride film is set so that the time for erasing data in a nonvolatile semiconductor storage element through irradiation with ultraviolet rays is not increased. | ||
| 申请公布号 | US9589972(B2) | 申请公布日期 | 2017.03.07 |
| 申请号 | US201414769048 | 申请日期 | 2014.01.22 |
| 申请人 | SII Semiconductor Corporation | 发明人 | Someya Tetsuo |
| 分类号 | H01L23/48;H01L27/115;H01L23/31;H01L23/532;H01L27/144 | 主分类号 | H01L23/48 |
| 代理机构 | Adams & Wilks | 代理人 | Adams & Wilks |
| 主权项 | 1. An ultraviolet-erasable nonvolatile semiconductor device, comprising: a semiconductor substrate; an ultraviolet-erasable nonvolatile semiconductor storage element formed in a surface of the semiconductor substrate; a top metal formed on the semiconductor substrate; and a protective film formed on the ultraviolet-erasable nonvolatile semiconductor storage element and the top metal, the protective film comprising a first silicon nitride film, a silicon oxynitride film laminated thereon, a thickness of the silicon oxynitride film being thicker than that of the first silicon nitride film, and a second silicon nitride film laminated on the silicon oxynitride film. | ||
| 地址 | JP | ||