Compensation of second order temperature dependence of mechanical resonator frequency

摘要

Apparatus and methods for control of the second order temperature dependence of the frequency of a mechanical resonating structure are described. The second order temperature dependence of frequency of the mechanical resonating structure may be non-linear. Control may be provided by doping of a semiconductor layer of the mechanical resonating structure.

主权项

1. A mechanical resonating structure, comprising:
a plurality of stacked layers, comprising
a piezoelectric material active layer;a plurality of electrodes configured to actuate the piezoelectric material active layer by applying thereto an excitation signal; anda doped semiconductor layer coupled to the piezoelectric material active layer and coupled to a substrate by at least one anchor, wherein thicknesses of the plurality of stacked layers combine to provide a first order temperature coefficient of frequency (TCF) that is approximately zero for a mode of vibration, and wherein the doped semiconductor layer has a doping concentration with a value configured to provide the mechanical resonating structure with a second order TCF that is substantially zero for the mode of vibration.