Semiconductor device having buried gate structure, method for manufacturing the same, memory cell having the same, and electronic device having the same

摘要

A method for forming a semiconductor structure includes forming a trench in a semiconductor substrate; forming a first dielectric layer over a bottom surface and sidewalls of the trench; forming a second dielectric layer over the first dielectric layer; forming a sacrificial layer that fills the trench, over the second dielectric layer; etching the sacrificial layer and the second dielectric layer, and forming a sacrificial filler and a dielectric liner that are positioned in the trench; removing the sacrificial filler; forming a conductive layer that fills the trench, over the dielectric liner and the first dielectric layer; and etching the conductive layer to be buried in the trench.

主权项

1. A method for forming a semiconductor structure, comprising:
forming a first doping region, a second doping region and a trench between the first and second doping regions in a semiconductor substrate; forming a gate dielectric layer over a surface of the trench; forming a dielectric liner layer over the gate dielectric layer; forming a sacrificial layer which fills the trench, over the dielectric liner layer; etching the sacrificial layer and the dielectric liner layer, and forming a sacrificial filler and a dielectric liner that are positioned in the trench; removing the sacrificial filler; forming a conductive layer which fills the trench, over the dielectric liner and the gate dielectric layer; and recessing the conductive layer, and forming a gate electrode that is buried in the trench.